Enhancement-Mode GaN Power Transistors
Normally-off gallium nitride discrete power FETs, spanning low- and high-voltage classes and thermally optimised packaging, enable denser, higher-efficiency 48 V and 800 VDC power conversion stages in AI servers, drives and inverters.
Developed mainly in: JapanImpacting: North America, Europe, Rest of Asia and China
Renesas has released a 650-V gallium nitride power FET packaged for dual-side cooling, removing heat from both top and bottom faces to cut thermal impedance and board area. The part targets intermediate bus converter stages in 800-V DC distribution architectures feeding AI racks drawing over 100 kW, where space and thermal headroom now bind before power limits.
This is one of 24 signals scored in our latest scan.
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First flagged
6 October 2026 · score 6.0/10
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Tracked from 2 signals, each traced to its source.
- Renesas extends GaN transistor line into 100V enhancement-mode power devices
Semiconductor-today · 7 Oct 2026
- Renesas launches dual-side-cooled 650-V GaN transistor for 800-V AI data center racks
Electronicdesign · 6 Oct 2026
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